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1

Improved Stability of Large Area Excimer Laser Crstallised Polysilicon Thin Film Transistors under DC and AC Operating

H. Toutah, J.F. Llibre, B. Tala-Ighil, T. Mohammed-Brahim, Y. Helen, G. Gautier, O. Bonnaud

Journal:

Microelectronics Reliability

Year:

2001

File:

PDF, 303 KB

2001

2

Gate bias stress in hydrogenated and unhydrogenated polysilicon thin film transistors

B. Tala-Ighil, H. Toutah, A. Rahal, K. Mourgues, L. Pichon, F. Raoult, O. Bonnaud, T. Mohammed-Brahim

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 359 KB

english, 1998

3

Stability of polysilicon thin film transistors under switch operating

H. Toutah, J.F. Llibre, B. Tala-Ighil, T. Mohammed-Brahim, K. Mourgues, Y. Helen, F. Raoult, O. Bonnaud

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 368 KB

english, 2000

4

Epoxy Based Ink as Versatile Material for Inkjet-Printed Devices

Robin, Malo, Kuai, Wenlin, Amela-Cortes, Maria, Cordier, Stéphane, Molard, Yann, Mohammed-Brahim, Tayeb, Jacques, Emmanuel, Harnois, Maxime

Journal:

ACS Applied Materials & Interfaces

Year:

2015

Language:

english

File:

PDF, 7.71 MB

english, 2015

5

Air-gap polysilicon thin film transistors on glass substrates

H Mahfoz–Kotb, A.C Salaün, T Mohammed-Brahim, N Coulon, O Bonnaud

Journal:

Sensors and Actuators A: Physical

Year:

2004

Language:

english

File:

PDF, 303 KB

english, 2004

6

Sensing sensibility of surface micromachined suspended gate polysilicon thin film transistors

H. Mahfoz-Kotb, A.C. Salaün, F. Bendriaa, F. Le Bihan, T. Mohammed-Brahim, J.R. Morante

Journal:

Sensors and Actuators B: Chemical

Year:

2006

Language:

english

File:

PDF, 481 KB

english, 2006

7

Top-gate microcrystalline silicon TFTs processed at low temperature (

A. Saboundji, N. Coulon, A. Gorin, H. Lhermite, T. Mohammed-Brahim, M. Fonrodona, J. Bertomeu, J. Andreu

Journal:

Thin Solid Films

Year:

2005

Language:

english

File:

PDF, 144 KB

english, 2005

8

Degradation in polysilicon thin film transistors related to the quality of the polysilicon material

H. Toutah, B. Tala-Ighil, J.F. Llibre, B. Boudart, T. Mohammed-Brahim, O. Bonnaud

Journal:

Microelectronics Reliability

Year:

2003

File:

PDF, 951 KB

2003

9

Oxygen adsorption-desorption effect on the electrical properties of a-Si:H layers

M. Aoucher, T. Mohammed-Brahim, C. Bodin, D. Mencaraglia

Journal:

Sensors and Actuators B: Chemical

Year:

1995

File:

PDF, 241 KB

1995

10

Laser crystallization of silicon for high-performance thin-film transistors

Dassow, R, Köhler, J R, Helen, Y, Mourgues, K, Bonnaud, O, Mohammed-Brahim, T, Werner, J H

Journal:

Semiconductor Science and Technology

Year:

2000

Language:

english

File:

PDF, 129 KB

english, 2000

11

Behavior of the parameters of microcrystalline silicon TFTs under mechanical strain

Janfaoui, S., Simon, C., Coulon, N., Mohammed-Brahim, T.

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 1.21 MB

english, 2014

12

μc-Si thin film transistors with very thin active layer

Samb, M.L., Jacques, E., Belarbi, K., Coulon, N., Mohammed-Brahim, T.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 723 KB

english, 2013

13

Assessment of replication fidelity of optical microstructures by hot embossing

Cirino, Giuseppe A., Granado, Renê M., Mohammed-Brahim, Tayeb, Jasinevicius, Renato G.

Journal:

The International Journal of Advanced Manufacturing Technology

Year:

2017

Language:

english

File:

PDF, 1.31 MB

english, 2017

14

Spontaneous Buckling of Multiaxially Flexible and Stretchable Interconnects Using PDMS/Fibrous Composite Substrates

Rogel, Régis, Borgne, Brice Le, Mohammed-Brahim, Tayeb, Jacques, Emmanuel, Harnois, Maxime

Journal:

Advanced Materials Interfaces

Year:

2016

Language:

english

File:

PDF, 1.98 MB

english, 2016

15

[IEEE 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC) - Toulouse, France (2016.10.9-2016.10.12)] 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC) - 13.56 MHz rectifier based on a microcrystalline silicon Schottky diodes for RFID application

Souleiman, I., Simon, C., Coulon, N., Crand, S., Mohammed-Brahim, T.

Year:

2016

Language:

english

File:

PDF, 162 KB

english, 2016

16

[IEEE 2016 10th International Conference on Sensing Technology (ICST) - Nanjing, China (2016.11.11-2016.11.13)] 2016 10th International Conference on Sensing Technology (ICST) - Capacitive sensor array for fingerprint recognition

Jeon, Y. E., Lee, Y. J., Jang, M. K., Seo, B. M., Kang, I. H., Hong, M. T., Lee, J. M., Jacques, E., Mohammed-Brahim, T., Bae, B. S.

Year:

2016

Language:

english

File:

PDF, 412 KB

english, 2016

17

Electrical conductance variation of a-Si: H films during a temperature programmed desorption

M. Aoucher, T. Mohammed-Brahim, B. Fortin, Y. Colin

Journal:

Journal of Physics and Chemistry of Solids

Year:

1993

Language:

english

File:

PDF, 611 KB

english, 1993

18

Experimental analysis and 2D-simulation of C–V characteristics in Ag/poly(Si)/ITO/glass Schottky diode

M. Amrani, N. Benseddik, Z. Benamara, R. Menezla, M. Chellali, S. Tizi, T. Mohammed-Brahim

Journal:

Materials Science and Engineering: B

Year:

2005

Language:

english

File:

PDF, 359 KB

english, 2005

19

Phosphorus doping and deposition pressure effects on optical and electrical properties of polysilicon

M. Zaghdoudi, M.M. Abdelkrim, M. Fathallah, T. Mohammed-Brahim, R. Rogel

Journal:

Materials Science and Engineering: C

Year:

2006

Language:

english

File:

PDF, 152 KB

english, 2006

20

Structural, optical and electrical properties of hydrogenated amorphous silicon germanium (a-Si1−xGex) deposited by DC magnetron sputtering at high rate

A. Fedala, R. Cherfi, M. Aoucher, T. Mohammed-Brahim

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 154 KB

english, 2006

21

1-D laser beam shaping using an adjustable binary diffractive optical element

Nicolas Passilly, Michael Fromager, Laurence Mechin, Chantal Gunther, Sylvain Eimer, Tayeb Mohammed-Brahim, Kamel Aït-Ameur

Journal:

Optics Communications

Year:

2004

Language:

english

File:

PDF, 778 KB

english, 2004

22

High polysilicon TFT field effect mobility reached thanks to slight phosphorus content in the active layer

M. Zaghdoudi, R. Rogel, N. Alzaied, M. Fathallah, T. Mohammed-Brahim

Journal:

Materials Science and Engineering: C

Year:

2008

Language:

english

File:

PDF, 495 KB

english, 2008

23

Realization of pressure Sensors using FET detection on a Thin Si Membrane

O. de Sagazan, E. Jacques, T. Mohammed-Brahim

Journal:

Procedia Engineering

Year:

2010

Language:

english

File:

PDF, 800 KB

english, 2010

24

Modeling the high pH sensitivity of Suspended Gate Field Effect Transistor (SGFET)

A.-C. Salaün, F. Le Bihan, T. Mohammed-Brahim

Journal:

Sensors and Actuators B: Chemical

Year:

2011

Language:

english

File:

PDF, 877 KB

english, 2011

25

Highly controllable dual-gate microcrystalline silicon thin film transistor processed at low temperature (T 

K. Kandoussi, E. Jacques, N. Coulon, C. Simon, T. Mohammed-Brahim

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 429 KB

english, 2011

26

Solid phase post-treatment of polysilicon films by a continuous argon laser

J.F. Michaud, R. Rogel, T. Mohammed-Brahim, M. Sarret, O. Bonnaud

Journal:

Thin Solid Films

Year:

2005

Language:

english

File:

PDF, 230 KB

english, 2005

27

Microcrystalline silicon and excimer laser crystallized silicon Thin Film Transistors on the same substratel

T. Pier, K. Kandoussi, C. Simon, N. Coulon, H. Lhermite, T. Mohammed-Brahim, J.F. Bergamini

Journal:

Thin Solid Films

Year:

2007

Language:

english

File:

PDF, 653 KB

english, 2007

28

Stepwise functionalization of SiNx surfaces for covalent immobilization of antibodies

Stéphanie Dauphas, Soraya Ababou-Girard, Aurélie Girard, France Le Bihan, Tayeb Mohammed-Brahim, Véronique Vié, Anne Corlu, Christiane Guguen-Guillouzo, Olivier Lavastre, Florence Geneste

Journal:

Thin Solid Films

Year:

2009

Language:

english

File:

PDF, 1.21 MB

english, 2009

29

Comparison of the electrical behavior in the subthreshold region between laser and solid phase crystallized polysilicon thin film transistors

L. Pichon, A. Mercha, R. Carin, T. Mohammed-Brahim, O. Bonnaud, Y. Helen

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 389 KB

english, 2002

30

High mobility thin film transistors by Nd:YVO4-laser crystallization

Y. Helen, R. Dassow, M. Nerding, K. Mourgues, F. Raoult, J.R. Köhler, T. Mohammed-Brahim, R. Rogel, O. Bonnaud, J.H. Werner, H.P. Strunk

Journal:

Thin Solid Films

Year:

2001

Language:

english

File:

PDF, 308 KB

english, 2001

31

Stability of unhydrogenated polysilicon thin film transistors and structural quality of the channel material

H. Toutah, B. Tala-Ighil, J.F. Llibre, A. Rahal, K. Mourgues, Y. Helen, T. Mohammed-Brahim, R. Dassow, J.R. Köhler

Journal:

Thin Solid Films

Year:

2001

Language:

english

File:

PDF, 313 KB

english, 2001

32

Transport mechanisms in hydrogenated microcrystalline silicon

R. Brenot, R. Vanderhaghen, B. Drévillon, P. Roca i Cabarrocas, R. Rogel, T. Mohammed-Brahim

Journal:

Thin Solid Films

Year:

2001

Language:

english

File:

PDF, 181 KB

english, 2001

33

State creation under gate-bias stress in polysilicon TFTs studied from the temperature-transfer characteristics behavior

H. Toutah, J.F. Llibre, B. Tala-Ighil, B. Boudart, T. Mohammed-Brahim

Journal:

Thin Solid Films

Year:

2003

Language:

english

File:

PDF, 241 KB

english, 2003

34

Polycrystalline silicon thin films for MEMS applications

H. Mahfoz-Kotb, A.C. Salaün, T. Mohammed-Brahim, F. Le Bihan, M. El-Marssi

Journal:

Thin Solid Films

Year:

2003

Language:

english

File:

PDF, 285 KB

english, 2003

35

Meyer–Neldel parameter as a figure of merit for quality of thin-film-transistor active layer?

L Pichon, A Mercha, J.M Routoure, R Carin, O Bonnaud, T Mohammed-Brahim

Journal:

Thin Solid Films

Year:

2003

Language:

english

File:

PDF, 174 KB

english, 2003

36

Contactless electronic transport analysis of microcrystalline silicon

R Brenot, R Vanderhaghen, B Drevillon, T Mohammed-Brahim, P Roca i Cabarrocas

Journal:

Thin Solid Films

Year:

1999

Language:

english

File:

PDF, 166 KB

english, 1999

37

State creation induced by gate bias stress in unhydrogenated polysilicon TFTs

B. Tala-Ighil, A. Rahal, K. Mourgues, A. Toutah, L. Pichon, T. Mohammed-Brahim, F. Raoult, O. Bonnaud

Journal:

Thin Solid Films

Year:

1999

Language:

english

File:

PDF, 211 KB

english, 1999

38

Single shot excimer laser crystallization and LPCVD silicon TFTs

Y Helen, K Mourgues, F Raoult, T Mohammed-Brahim, O Bonnaud, R Rogel, S Prochasson, P Boher, D Zahorski

Journal:

Thin Solid Films

Year:

1999

Language:

english

File:

PDF, 248 KB

english, 1999

39

Study of the solid phase crystallization behavior of amorphous sputtered silicon by X-ray diffraction and electrical measurements

G Farhi, M Aoucher, T Mohammed-Brahim

Journal:

Solar Energy Materials and Solar Cells

Year:

2002

Language:

english

File:

PDF, 210 KB

english, 2002

40

Deposition temperature effects on the characteristics of a-Si:H deposited by pulsed DC magnetron sputtering

R. Cherfi, A. Abdelmoumene, M. Kechouane, A. Rahal, M. Aoucher, T. Mohammed-Brahim

Journal:

physica status solidi (a)

Year:

2009

Language:

english

File:

PDF, 637 KB

english, 2009

41

Defect levels in HgI2 and illumination effect

T. Mohammed-Brahim

Journal:

physica status solidi (a)

Year:

1981

Language:

english

File:

PDF, 312 KB

english, 1981

42

Characterization of Deep Energy Levels in Mercuric Iodide

T. Mohammed-Brahim, A. Friant, J. Mellet

Journal:

physica status solidi (a)

Year:

1983

Language:

english

File:

PDF, 608 KB

english, 1983

43

Preface: phys. stat. sol. (c) 5/10

Norbert H. Nickel, Tayeb Mohammed-Brahim, Olivier Bonnaud

Journal:

physica status solidi (c)

Year:

2008

Language:

english

File:

PDF, 37 KB

english, 2008

44

Excimer laser annealing of microcrystalline silicon

T. Pier, K. Kandoussi, C. Simon, N. Coulon, T. Mohammed-Brahim, H. Lhermite

Journal:

physica status solidi (c)

Year:

2008

Language:

english

File:

PDF, 340 KB

english, 2008

45

Decreasing the thickness of the active layer of microcrystalline silicon TFTs

K. Belarbi, K. Kandoussi, I. Souleiman, C. Simon, N. Coulon, T. Mohammed-Brahim

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 251 KB

english, 2010

46

N and P type top-gate microcrystalline silicon TFTs processed at low temperature (T < 200 °C) on the same glass substrate

Isman Souleiman, Khalid Kandoussi, Khaled Belarbi, Rabah Cherfi, Abdlkrim Fedala, Nathalie Coulon, Claude Simon, Tayeb Mohammed-Brahim

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 253 KB

english, 2010

47

The annealing temperature effect on the electrical properties of boron-doped hydrogenated amorphous silicon a-Si:H(B)

N. Khelifati, S. Tata, A. Rahal, R. Cherfi, A. Fedala, M. Kechouane, T. Mohammed-Brahim

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 222 KB

english, 2010

48

Low temperature deposition of microcrystalline silicon germanium Si1-xGex by RF-PECVD

Abdelkrim Fedala, Claude Simon, Nathalie Coulon, Tayeb Mohammed-Brahim, Mehena Abdeslam, Ahmed-Chafik Chami

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 81 KB

english, 2010

49

Erythrocyte pyrimidine 5′-nucleotidase activity in workers exposed to lead, mercury or cadmium

B. Mohammed-Brahim, J. P. Buchet, R. Lauwerys

Journal:

International Archives of Occupational and Environmental Health

Year:

1985

Language:

english

File:

PDF, 291 KB

english, 1985

50

Improvement of electrical properties of silicon-based thin-film transistors by modifying technological fabrication processes

Olivier Bonnaud, Tayeb Mohammed-Brahim

Journal:

Applied Physics A: Materials Science & Processing

Year:

2009

Language:

english

File:

PDF, 2.64 MB

english, 2009

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